WebDiscrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Vishay Siliconix IRF530 IRF530 is Obsolete and no longer manufactured. Available Substitutes: Direct IRF530PBF Vishay Siliconix In Stock: 11,225 Unit Price: $1.40000 Datasheet Parametric Equivalent IRF530PBF-BE3 Vishay Siliconix In Stock: 924 Unit Price: … WebThe transistor is capable of high-speed switching and it is capable to deliver switching speed in nanoseconds due to which the designer can use it in applications where high-speed switching is crucial. The maximum load this transistor is capable to drive is -12A and -48A in pulse mode with the max voltage of -100V. ... IRF530. Vishay Siliconix ...
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WebMar 12, 2024 · IRF530 onsemi / Fairchild MOSFET datasheet, inventory, & pricing. Mouser ships most UPS, FedEx, and DHL orders same day. Global Priority Mail orders ship on the next business day.The following exceptions cause orders to be reviewed before processing. WebApr 12, 2024 · 100 V. Id - Continuous Drain Current: 14 A. Rds On - Drain-Source Resistance: 180 mOhms. Vgs - Gate-Source Voltage: - 20 V, + 20 V. Minimum Operating Temperature: - … d7 arrowhead\\u0027s
IRF MOSFET Power Transistors - Futurlec
WebTransistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. •Silicon Gate for Fast Switching Speeds •Low RDS(on) to Minimize On−Losses, Specified at Elevated Temperature Web2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ŒŒŒ ŒŒŒ showing the ISM Pulsed Source Current integral reverse (Body Diode) ŒŒŒ ŒŒŒ p-n junction … WebFeb 25, 2024 · BOJACK IRF530N MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits. Basic parameters: The IRF530N is available in a TO … bing rewards account points stats